Mimix Introduces 8.5 To 11 GHz GaAs MMIC High Power Amplifier
Three-stage, 10 W amplifier has on-chip gate bias circuit to simplify biasing
Houston, TX -- Mimix Broadband, Inc. has introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three-stage, single ended, X-band high power amplifier, which integrates an on-chip gate bias circuit to simplify biasing. Using 0.5 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this device covers the 8.5 to 11 GHz frequency bands, delivers 39 to 40.5 dBm output power, and offers 27 to 33% power added efficiency. The amplifier also has a typical large signal gain of 21 dB with good input and output match. This high power amplifier, identified as XP1006, is well suited for radar and communications systems, primarily for military applications.
"Mimix offers this high power amplifier in partnership with TNO," Rick Montgomery, CEO of Mimix Broadband, stated. "As strategic partners, we have collaborated to supply this 10 watt high power amplifier to the marketplace, offering an industry leading device for X-band applications. This device not only delivers high power output, it also offers excellent power added efficiency."
"TNO brings to this partnership 10 years of experience in the X-band high power amplifier radar market," adds Frank van den Bogaart, department head, Integrated Front End Solutions, TNO Physics and Electronics Laboratory. "We are convinced that the complementary qualities of the two companies guarantee a bright and successful future."
Mimix performs 100% on-wafer RF and DC testing on the XP1006, as well as 100% visual inspection to MILSTD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.
Engineering samples are available today from stock, and production quantities are available 6-8 weeks ARO.
Source: Mimix Broadband