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PRODUCTS AND SERVICES
Qorvo offers the QPB8957 GaAs pHEMT/MESFET 75-ohm doubler RF amplifier IC featuring over 28dB of flat gain and low noise. This IC is designed to support DOCSIS 3.1 applications up to 1003 MHz using a single 24V supply.
The KMW2040-LTE is an RF power amplifier module for OEM applications featuring a break between stages for insertion of customer BP filters, a forward power monitor, and a heatsink temperature monitor.
Noisecom's noise diodes are the fundamental building blocks for analog noise systems. They are categorized for performance characteristics that enhance their broadband noise output and flat spectral response.
Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process.
Qorvo introduces the new QPM1002 GaN MMIC front-end module (FEM) designed specifically for X-band radar applications in the 8.5 – 10.5 GHz frequency range. Combining a T/R switch, low-noise amplifier, and a power amplifier, this device delivers a small signal gain of 33 dB, delivers 3 W of saturated power, and 25 dB of large signal gain.
The QPB9378 is a highly integrated RF front-end module targeted for 5G TDD base stations. The module integrates a two-stage LNA and a high-power SPDT switch in a dual-channel configuration.