Laminates

Rack mount amplifier systems cover wide frequency spectrums and offer diverse ranges of power table. These systems are used for communications, medical, scientific, and industrial applications.

This standard rack-mounted amplifier features a Class AB linear GaN hybrid design, delivering full X-Band instantaneous bandwidth from 8 to 12 GHz.

The Series 3700 offers scalable, instrument grade switching and multi-channel measurement solutions that are optimized for automated testing of electronic products and components. The Series 3700 includes four versions of the Model 3706 system switch mainframe along with a growing family of plug-in switch and control cards

The dB-3774B is a pulsed microwave power module (MPM) operating in the 6 to 18 GHz frequency range. It provides 1 kW peak power at 5% maximum duty cycle and is designed for high-performance electronic warfare applications. A periodic permanent magnet (PPM)-focused, conduction-cooled mini traveling wave tube (TWT) is used for power amplification.

The MEQ14-14ASM passive MMIC equalizer QFN is an ideal solution for compensating for low pass filtering effects in RF/microwave and high speed digital systems.

Qorvo offers the QPF4551 integrated front end module (FEM) for Wi-Fi 6 (802.11ax) systems. With a compact form factor and integrated matching, this module minimizes the layout area required for its application. It is ideally used for access points, wireless routers, residential gateways, residential gateways, premise equipment, and Internet of Things applications.

Qorvo offers the QPA2211D wideband power amplifier MMIC covering the 27 – 31 GHz frequency range for 5G infrastructure and satellite communications applications. Fabricated on Qorvo’s production 0.15 um GaN on SiC process, the QPA2211D achieves 5 W linear power with −25 dBc intermodulation distortion products and 26 dB small signal gain. Saturated output power is 14 W with power-added efficiency of 34%.

The ADRF5474 is a 4-bit digital attenuator with 22 dB attenuation control range in 2 dB steps manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of the device is metalized and connected to ground.