Laminates

Designed for use in GSM900 and DCS1800 networks, the HP E6382A GSM test set offers frequency coverage ranges of 0.4 MHz to 1 GHz and 1.7 to 2 GHz

Holzworth presents the revised HA7062C Phase Noise Analyzer that is capable of reaching theoretical measurement limits for the highest performing DUTs. The HA7062C fully integrated phase noise analysis system is highly reliable and intuitive while offering real time measurement speeds for optimal manufacturing test throughput. The HA7062C is also a cost effective solution for R&D, delivering measurement floors below -190 dBc/Hz.

Skyworks offers the SKYH22002 ultra-broadband hermetically sealed low-noise amplifier with superior gain flatness and exceptional linearity. Ideal applications include L-, S-, and C-band communications, radar and weather satellites, test and measurement, extreme industrial and medical equipment, and aerospace and defense applications.

The dB-4409 is a 9-inch, pod-mounted, dual-band Traveling Wave Tube Amplifier (TWTA) operating in the 2 to 18 GHz frequency range and providing 300 Watts, continuous wave power.

SAGE Millimeter offers the Model SAY-3433632750-28-U5-MP monopulse Cassegrain antenna designed to operate in the 34 to 36 GHz frequency range with a half-power beam width of 5.0 degrees. It is ideally suited for use in 5G systems, as well as many types of communication and radar systems.

The KAA402* Series of 19" Rack Mount RF Amplifiers consists of three models, KAA4020, KAA4020P, and KAA4021P. These Class AB wideband RF power amplifiers deliver more than 500 Watts CW power into a 50-Ohm load over the frequency range of 1MHz to 50MHz.

The R&S EPL1000 is the perfect device for quick, precise and compliant EMI measurements up to 30 MHz. With the added features of a spectrum analyzer and a signal and tracking generator, the R&S®EPL1000 is ideal for various lab applications.

The UJ4SC075009B7S is a 750 V, 9 mohm Gen 4 SiC FET based on a unique cascode circuit configuration where a normally-on SiC JFET is co-packaged with a Si MOSFET to make a normally-off SiC FET device.