New Wideband GaAs pHEMT MMIC Power Amplifier Covers DC To 40 GHz

New Distributed PA Chip Delivers up to +25 dBm Saturated Output Power

Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced a new GaAs pHEMT MMIC Power Amplifier which is ideal for test instrumentation, microwave radio, and military and space applications from DC to 40 GHz.

The HMC930 is a GaAs pHEMT MMIC Distributed Power Amplifier die which operates between DC and 40 GHz, and delivers up to 13 dB of gain, +33.5 dBm output IP3 and +22 dBm of output power at 1 dB gain compression. The input and output return losses of the HMC930 are better than 12 dB and 16 dB respectively, across the band. The gain flatness is excellent at ±0.3 dB from 12 to 32 GHz, while a slightly positive gain slope in this same band makes the HMC930 ideal for microwave radio, and military EW and ECM applications. This compact power amplifier die occupies less than 4.25 mm2, consumes only 175 mA from a +10 V supply, and is specified for operation over the -55 to +85 ºC temperature range.

For more information, visit www.hittite.com.

About Hittite Microwave Corporation
Hittite Microwave Corporation is an innovative designer and manufacturer of analog, digital and mixed-signal ICs, modules, subsystems and instrumentation for digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. Our Digital/RFIC/MMIC products are developed using state-of-the-art GaAs, GaN, InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes utilizing MESFET, HEMT, pHEMT, mHEMT, HBT and PIN devices. Our custom and standard products support a wide range of wireless / wired communications and radar applications for Automotive, Broadband, Cellular/4G, Fiber Optics, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets.

SOURCE: Hittite Microwave Corporation