Datasheet | July 7, 2005

Datasheet: IB3135MH100 S-Band Radar Transistor

Source: Integra Technologies, Inc.
The high power pulsed radar transistor device part number IB3135MH100 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C mode this common base device supplies a minimum of 100 watts of peak pulse power under the conditions of 100ms pulse width and 10% duty cycle over the frequency range of 3.1-3.5 GHz.
access the Datasheet!

Get unlimited access to:
Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue. X

Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.

Subscribe to RF Globalnet X

Please enter your email address and create a password to access the full content, Or log in to your account to continue.

or

Subscribe to RF Globalnet

Please tell us more about you so that we can customize our newsletters to your specific interests: