Datasheet | July 7, 2005

Datasheet: IB2731M100 S-Band Radar Transistor

Source: Integra Technologies, Inc.
The high power pulsed radar transistor device part number IB2731M100 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.7-3.1 GHz. While operating in class C mode this common base device supplies a minimum of 100 watts of peak pulse power under the conditions of 200ms pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.
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