transistors-products
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X-Band, GaN/SiC Power Transistor: IGT1112M90
5/14/2019
Integra Technologies offers the IGT1112M90 X-band, GaN/SiC power transistor designed to meet the requirements of radar systems operating in the X-band. Operating in the 10.8 – 11.8 GHz frequency range with under 150µs and 10% duty cycle pulse conditions, the device supplies a minimum of 90 W of peak output power, with an associated 9 dB of gain and 35% efficiency.
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10500 Avionics Transistor
8/12/2005
APT RF’s Avionics Transistor, 500W, Class C, common base power transistor is designed for Mode-S systems covering 1030-1090 MHz...
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450MHz 500W UHF Radar Transistor
7/7/2005
The high power pulsed radar transistor device part number IB450S500 is designed for UHF radar systems operating at 450 MHz. While operating in class C mode this common base device supplies a minimum of 500 watts of peak pulse power under the conditions of 30us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters...
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High L-Band Series Transistors
1/30/2006
The High L-Band series transistors from Advanced Power Technology consists of three model types: 1517-20M, 1517-110M, and 1517-250M which cover the frequency for High L-Band Radar Applications from 1480 to 1650 MHz with a pulsed output power of 20W, 110W, and 250W respectively...
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GaN RF Input-Matched Transistor: QPD1025L
11/3/2022
The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space.
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VRF152 -- RF Power Vertical MOSFET Transistor
6/25/2009
The new VRF152 from Microsemi is a gold-metalized silicon n-channel RF power transistor designed for broadband commercial and hi-rel applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulations distortion. It can operate up to 175MHz at 150W with a typical gain of 13dB at very high efficiency on a 50V DC supply.
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RF Transistor: 2729GN-500V
5/7/2013
Microsemi’s 2729GN-500V RF transistor is based on GaN on SiC technologies and targeted at high-power air traffic control airport surveillance radar applications. The 2729GN-500V delivers unparalleled performance of 500W of peak power with 12 dB of power gain and 53% drain efficiency over band 2.7 to 2.9 GHz band.
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1,500 Watt RF Power Transistor For UHF Pulsed Radar
3/17/2010
Microsemi Corporation recently introduced the new 1,500 watt RF power transistor for UHF pulsed radar applications, thus expanding its industry-leading portfolio of high power silicon carbide transistors.
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Synthesized LO Loop Test Translators (LTTs): ALR Series
10/11/2017
The new ALR series of dual channel loop test translators (LTTs) features simultaneous operation within the Ka and Ku bands, and has the ability to introduce different transfer characteristics in each channel. These instruments are used in an array of testing applications for frequency conversions of uplink (Tx) frequencies to either downlink (Rx) frequencies or to L-Band, and for L-Band to downlink (Rx).
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GaN RF Transistor: QPD1016
11/3/2022
The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply.